*For representation only.
DIW120SIC022-AQ
| Mfr. No: | DIW120SIC022-AQ |
| Mfr.: | Diotec Semiconductor |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs SiC MOSFET, TO-247-3L, 0, 120A, 1200V, 0.0223?, Automotive |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 22.3mOhm @ 75A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 23.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 269 nC @ 18 V |
| Vgs (Max) | +18V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 4817 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 340W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
10,497
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 70 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Diotec Semiconductor, the DIW120SIC022-AQ is classified under sic mosfets. Its datasheet lists FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 120A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 22.3mOhm @ 75A, 18V. This part has a typical lead time of 70 Days from factory. Get DIW120SIC022-AQ from Simplytronix, shipped same day with a genuine parts guarantee.
