| Mfr. No: | EPC2092 |
| Mfr.: | EPC |
| Category: | GaN FETs |
| Description: | GaN FETs 100 V eGaN FET, 3.2 mohm Rdson, 3.725 mm x 1.45 mm, Cu pillar CSP |
| Lifecycle: | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 69A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 30A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
| Gate Charge (Qg) (Max) @ Vgs | 15.8 nC @ 5 V |
| Vgs (Max) | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 2308 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| Package / Case | Die |
| Packaging | Reel |
| Standard Pack Qty | 1000 |
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 126 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290040 |
EPC2092 is a gan fets component manufactured by EPC. This part is specified with FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 69A (Tc), drive voltage: 5V and rds on (max) @ id, vgs: 3.2mOhm @ 30A, 5V. This part has a typical lead time of 126 Days from factory. Simplytronix offers EPC2092 in stock, verified authentic and ready for same-day dispatch.