*For representation only.
EPC2104
| Mfr. No: | EPC2104 |
| Mfr.: | EPC |
| Category: | GaN FETs |
| Description: | GaN FETs EPC eGaN Symetrical Half Bridge,100 V, 6.8 milliohm at 5 V, BGA 6.05 x 2.3 |
| Lifecycle: | Active |
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Specifications
| Technology | GaNFET (Gallium Nitride) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 23A |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 20A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 5.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 50V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 500 |
5,501
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New at Mouser |
| Lead Time | 126 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290040 |
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Product Overview
The EPC2104 from EPC falls under the gan fets category. Key specifications include technology: GaNFET (Gallium Nitride), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 100V, current, continuous drain (id) @ 25°C: 23A and rds on (max) @ id, vgs: 6.3mOhm @ 20A, 5V. This part has a typical lead time of 126 Days from factory. EPC2104 is available through Simplytronix, sourced and verified for authenticity.
