*For representation only.
EPC2306
| Mfr. No: | EPC2306 |
| Mfr.: | EPC |
| Category: | GaN FETs |
| Description: | GaN FETs EPC eGaN FET,100 V, 3.1 milliohm at 5 V, 3 mm x 5 mm QFN |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 48A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 25A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
| Gate Charge (Qg) (Max) @ Vgs | 16.3 nC @ 5 V |
| Vgs (Max) | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 2366 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 7-QFN (3x5) |
| Package / Case | 7-PowerWQFN |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
11,764
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New at Mouser |
| Lead Time | 126 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290040 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
The EPC2306 from EPC falls under the gan fets category. This component is defined by FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 48A (Ta), drive voltage: 5V and rds on (max) @ id, vgs: 3.8mOhm @ 25A, 5V. This part has a typical lead time of 126 Days from factory. EPC2306 is available through Simplytronix, sourced and verified for authenticity.
