*For representation only.
EPC8002
| Mfr. No: | EPC8002 |
| Mfr.: | EPC |
| Category: | GaN FETs |
| Description: | GaN FETs EPC eGaN FET,65 V, 480 milliohm at 5 V, LGA 2.05 x 0.85 |
| Lifecycle: | Active |
| Datasheet: | EPC8002 Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 65 V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 530mOhm @ 500mA, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Vgs (Max) | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 21 pF @ 32.5 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| Package / Case | Die |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
11,889
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New at Mouser |
| Lead Time | 126 Days (from factory) |
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Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290040 |
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Product Overview
The EPC8002, made by EPC, belongs to the gan fets product category. Technical specifications for this part include FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 65 V, current, continuous drain (id) @ 25°C: 2A (Ta), drive voltage: 5V and rds on (max) @ id, vgs: 530mOhm @ 500mA, 5V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks EPC8002 for same-day shipping with genuine parts guaranteed.
