*For representation only.
EPC2110
| Mfr. No: | EPC2110 |
| Mfr.: | EPC |
| Category: | GaN FETs |
| Description: | GaN FETs EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35 |
| Lifecycle: | Active |
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Specifications
| Technology | GaNFET (Gallium Nitride) |
| Configuration | 2 N-Channel (Dual) Common Source |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 120V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | Die |
| Supplier Device Package | Die |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
12,584
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New at Mouser |
| Lead Time | 141 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290040 |
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Product Overview
EPC's EPC2110 is a widely used gan fets part in electronic designs. Technical specifications for this part include technology: GaNFET (Gallium Nitride), configuration: 2 N-Channel (Dual) Common Source, FET feature: -, drain to source voltage: 120V, current, continuous drain (id) @ 25°C: 3.4A and rds on (max) @ id, vgs: 60mOhm @ 4A, 5V. This part has a typical lead time of 141 Days from factory. Simplytronix supplies EPC2110 with same-day shipping and guaranteed authenticity.
