*For representation only.
G2R1000MT33J-TR
| Mfr. No: | G2R1000MT33J-TR |
| Mfr.: | GeneSiC Semiconductor |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 3300V 1000mohm TO-263-7 G2R SiC MOSFET |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 3300 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 20V |
| Vgs(th) (Max) @ Id | 3.5V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 20 V |
| Vgs (Max) | +20V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 238 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 800 |
5,961
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 182 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
As a sic mosfets component, the G2R1000MT33J-TR is manufactured and supplied by GeneSiC Semiconductor. This component is defined by FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 3300 V, current, continuous drain (id) @ 25°C: 5A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 1.2Ohm @ 2A, 20V. This part has a typical lead time of 182 Days from factory. Simplytronix carries G2R1000MT33J-TR in stock, backed by a genuine parts guarantee and quick dispatch.
