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G3F09MT12GB4-T GeneSiC Semiconductor
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G3F09MT12GB4-T

Mfr. No: G3F09MT12GB4-T
Mfr.: GeneSiC Semiconductor
Category: MOSFET Modules
Description: MOSFET Modules 1200V 9mohm Full-Bridge SiCPAK G SiC Module, TIM
Lifecycle: Active
Datasheet: G3F09MT12GB4-T Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 4 N-Channel (Full Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 104A (Tc)
Rds On (Max) @ Id, Vgs 12.5mOhm @ 90A, 18V
Vgs(th) (Max) @ Id 4.3V @ 70mA
Gate Charge (Qg) (Max) @ Vgs 392nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 9850pF @ 800V
Power - Max 216W (Tc)
Operating Temperature -40°C ~ 175°C
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package SiCPAK G
📦 Product Attributes
Packaging Tray
Standard Pack Qty 48
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,911
Units In Stock
📦 Tray
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🔑 Key Specifications
Category MOSFET Modules
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

GeneSiC Semiconductor manufactures the G3F09MT12GB4-T, a mosfet modules part used in electronic assemblies. It features technology: Silicon Carbide (SiC), configuration: 4 N-Channel (Full Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 104A (Tc) and rds on (max) @ id, vgs: 12.5mOhm @ 90A, 18V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. You can source G3F09MT12GB4-T through Simplytronix, with fast shipping and verified authenticity.

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