| Mfr. No: | G3F20MT12K |
| Mfr.: | GeneSiC Semiconductor |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 1200V 20mohm TO-247-4 G3F SiC MOSFET |
| Lifecycle: | Active |
| FET Type | N-Channel |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 182 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
As a sic mosfets component, the G3F20MT12K is manufactured and supplied by GeneSiC Semiconductor. Key specifications include FET type: N-Channel, technology: SiC (Silicon Carbide Junction Transistor), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: -, drive voltage: - and rds on (max) @ id, vgs: -. This part has a typical lead time of 182 Days from factory. Simplytronix carries G3F20MT12K in stock, backed by a genuine parts guarantee and quick dispatch.