| Mfr. No: | G3F60MT06K |
| Mfr.: | GeneSiC Semiconductor |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 650V 55mohm TO-247-4 G3F SiC MOSFET |
| Lifecycle: | Active |
| FET Type | N-Channel |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 15A, 18V |
| Vgs(th) (Max) @ Id | 4.3V @ 7mA |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1322 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 182 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
G3F60MT06K is a sic mosfets part produced by GeneSiC Semiconductor for use across a range of applications. Technical specifications for this part include FET type: N-Channel, technology: SiC (Silicon Carbide Junction Transistor), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 42A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 75mOhm @ 15A, 18V. This part has a typical lead time of 182 Days from factory. Order G3F60MT06K from Simplytronix for authenticated stock and same-day order processing.