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G3F75MT12J-TR GeneSiC Semiconductor
*For representation only.

G3F75MT12J-TR

Mfr. No: G3F75MT12J-TR
Mfr.: GeneSiC Semiconductor
Category: SiC MOSFETs
Description: SiC MOSFETs 1200V 75mohm TO-263-7 G3F SiC MOSFET
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 100mOhm @ 12A, 18V
Vgs(th) (Max) @ Id 4.3V @ 9mA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 988 pF @ 800 V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,671
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 182 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Manufactured by GeneSiC Semiconductor, the G3F75MT12J-TR is classified under sic mosfets. This component is defined by FET type: N-Channel, technology: SiC (Silicon Carbide Junction Transistor), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 31A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 100mOhm @ 12A, 18V. This part has a typical lead time of 182 Days from factory. Get G3F75MT12J-TR from Simplytronix, shipped same day with a genuine parts guarantee.

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