| Mfr. No: | G3R160MT12J-TR |
| Mfr.: | GeneSiC Semiconductor |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 1200V 160mohm TO-263-7 G3R SiC MOSFET |
| Lifecycle: | Obsolete |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 18V |
| Vgs(th) (Max) @ Id | 2.7V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 15 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 724 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Packaging | Reel |
| Standard Pack Qty | 800 |
| Alternate Packaging | |
| Suggested Replacement | G3F18MT12K |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The G3R160MT12J-TR from GeneSiC Semiconductor falls under the sic mosfets category. Its datasheet lists FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 19A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 180mOhm @ 10A, 18V. This part has a typical lead time of 0 Days from factory. G3R160MT12J-TR is available through Simplytronix, sourced and verified for authenticity.