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G3R160MT17D GeneSiC Semiconductor
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G3R160MT17D

Mfr. No: G3R160MT17D
Mfr.: GeneSiC Semiconductor
Category: SiC MOSFETs
Description: SiC MOSFETs 1700V 160mohm TO-247-3 G3R SiC MOSFET
Datasheet: G3R160MT17D Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 208mOhm @ 12A, 15V
Vgs(th) (Max) @ Id 2.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 15 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 1272 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 175W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,473
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
ECCN EAR99
ℹ Product Overview

As a sic mosfets component, the G3R160MT17D is manufactured and supplied by GeneSiC Semiconductor. This part is specified with FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1700 V, current, continuous drain (id) @ 25°C: 21A (Tc), drive voltage: 15V and rds on (max) @ id, vgs: 208mOhm @ 12A, 15V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries G3R160MT17D in stock, backed by a genuine parts guarantee and quick dispatch.

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