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G3R450MT17J-TR GeneSiC Semiconductor
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G3R450MT17J-TR

Mfr. No: G3R450MT17J-TR
Mfr.: GeneSiC Semiconductor
Category: SiC MOSFETs
Description: SiC MOSFETs 1700V 450mohm TO-263-7 G3R SiC MOSFET
Lifecycle: Active
Datasheet: G3R450MT17J-TR Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 585mOhm @ 4A, 15V
Vgs(th) (Max) @ Id 2.7V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 15 V
Vgs (Max) +15V, -5V
Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,330
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

Manufactured by GeneSiC Semiconductor, the G3R450MT17J-TR is classified under sic mosfets. This component is defined by FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1700 V, current, continuous drain (id) @ 25°C: 8A (Tc), drive voltage: 15V and rds on (max) @ id, vgs: 585mOhm @ 4A, 15V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Get G3R450MT17J-TR from Simplytronix, shipped same day with a genuine parts guarantee.

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