*For representation only.
G3R20MT12N
| Mfr. No: | G3R20MT12N |
| Mfr.: | GeneSiC Semiconductor |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 1200V 20mohm SOT-227 G3R SiC MOSFET |
| Lifecycle: | Obsolete |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 60A, 15V |
| Vgs(th) (Max) @ Id | 2.69V @ 15mA |
| Gate Charge (Qg) (Max) @ Vgs | 219 nC @ 15 V |
| Vgs (Max) | +20V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5873 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 365W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227 |
| Package / Case | SOT-227-4, miniBLOC |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 10 |
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Alternate / Replacement Parts
| Alternate Packaging | |
| Suggested Replacement | G3F25MT12J-TR |
3,034
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
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Product Overview
As a sic mosfets component, the G3R20MT12N is manufactured and supplied by GeneSiC Semiconductor. Among its key specs are FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 105A (Tc), drive voltage: 15V and rds on (max) @ id, vgs: 24mOhm @ 60A, 15V. This part has a typical lead time of 0 Days from factory. Simplytronix carries G3R20MT12N in stock, backed by a genuine parts guarantee and quick dispatch.
