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iS20M028S1P iDEAL Semiconductor
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iS20M028S1P

Mfr. No: iS20M028S1P
Mfr.: iDEAL Semiconductor
Category: MOSFETs
Description: MOSFETs SuperQ power MOSFET 200 V, 25m? max, normal threshold level in TO-220 package
Datasheet: iS20M028S1P Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4.1V @ 70µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2425 pF @ 100 V
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 50
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,524
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 84 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Manufactured by iDEAL Semiconductor, the IS20M028S1P is classified under mosfets. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 200 V, current, continuous drain (id) @ 25°C: 40A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 25mOhm @ 13A, 10V. This part has a typical lead time of 84 Days from factory and ships with a full manufacturer datasheet available for download. Get IS20M028S1P from Simplytronix, shipped same day with a genuine parts guarantee.

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