*For representation only.
AIMBF170R450M1XTMA1
| Mfr. No: | AIMBF170R450M1XTMA1 |
| Mfr.: | Infineon Technologies |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs Automotive CoolSiC MOSFET 1700 V in D2PAK |
| Datasheet: | AIMBF170R450M1XTMA1 Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V, 20V |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 2A, 20V |
| Vgs(th) (Max) @ Id | 5.7V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 22.5 nC @ 20 V |
| Vgs (Max) | +23V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 514 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 142W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
5,767
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 364 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| ECCN | EAR99 |
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Product Overview
AIMBF170R450M1XTMA1 is a sic mosfets component manufactured by Infineon Technologies. Its datasheet lists FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1700 V, current, continuous drain (id) @ 25°C: 15A (Tc), drive voltage: 12V, 20V and rds on (max) @ id, vgs: 340mOhm @ 2A, 20V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers AIMBF170R450M1XTMA1 in stock, verified authentic and ready for same-day dispatch.
