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AIMCQ120R080M1TXTMA1 Infineon Technologies
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AIMCQ120R080M1TXTMA1

Mfr. No: AIMCQ120R080M1TXTMA1
Mfr.: Infineon Technologies
Category: SiC MOSFETs
Description: SiC MOSFETs Tailored to address OBC/DC-DC applications for 800V Automotive architecture
Datasheet: AIMCQ120R080M1TXTMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 5.1V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 671 pF @ 800 V
FET Feature -
Power Dissipation (Max) 211W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-22
Package / Case 22-PowerBSOP Module
📦 Product Attributes
Packaging Reel
Standard Pack Qty 750
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,955
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 364 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

AIMCQ120R080M1TXTMA1 is a sic mosfets part produced by Infineon Technologies for use across a range of applications. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 34A (Tc), drive voltage: 18V, 20V and rds on (max) @ id, vgs: 100mOhm @ 10A, 20V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Order AIMCQ120R080M1TXTMA1 from Simplytronix for authenticated stock and same-day order processing.

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