*For representation only.
AIMW120R045M1XKSA1
| Mfr. No: | AIMW120R045M1XKSA1 |
| Mfr.: | Infineon Technologies |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs SIC_DISCRETE |
| Datasheet: | AIMW120R045M1XKSA1 Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 20A, 15V |
| Vgs(th) (Max) @ Id | 5.7V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 15 V |
| Vgs (Max) | +20V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 800 V |
| Power Dissipation (Max) | 228W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 240 |
12,547
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 364 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
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Product Overview
AIMW120R045M1XKSA1 is a sic mosfets part produced by Infineon Technologies for use across a range of applications. Among its key specs are FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 52A (Tc), rds on (max) @ id, vgs: 59mOhm @ 20A, 15V and vgs(th) (max) @ id: 5.7V @ 10mA. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Order AIMW120R045M1XKSA1 from Simplytronix for authenticated stock and same-day order processing.
