| Mfr. No: | AIMW120R080M1XKSA1 |
| Mfr.: | Infineon Technologies |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs SIC_DISCRETE |
| Lifecycle: | Last Time Buy |
| Datasheet: | AIMW120R080M1XKSA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 13A, 15V |
| Vgs(th) (Max) @ Id | 5.7V @ 5.6mA |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 15 V |
| Vgs (Max) | +20V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-41 |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Standard Pack Qty | 240 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 364 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| ECCN | EAR99 |
The AIMW120R080M1XKSA1, made by Infineon Technologies, belongs to the sic mosfets product category. Among its key specs are FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 33A (Tc), drive voltage: 15V and rds on (max) @ id, vgs: 104mOhm @ 13A, 15V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks AIMW120R080M1XKSA1 for same-day shipping with genuine parts guaranteed.