*For representation only.
AIMZH120R060M1TXKSA1
| Mfr. No: | AIMZH120R060M1TXKSA1 |
| Mfr.: | Infineon Technologies |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs SIC_DISCRETE |
| Datasheet: | AIMZH120R060M1TXKSA1 Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 13A, 20V |
| Vgs(th) (Max) @ Id | 5.1V @ 4.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 20 V |
| Vgs (Max) | +23V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 197W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-4-11 |
| Package / Case | TO-247-4 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 240 |
11,013
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 364 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| ECCN | EAR99 |
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Product Overview
Infineon Technologies manufactures the AIMZH120R060M1TXKSA1, a sic mosfets part used in electronic assemblies. It features FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 38A (Tc), drive voltage: 18V, 20V and rds on (max) @ id, vgs: 75mOhm @ 13A, 20V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. You can source AIMZH120R060M1TXKSA1 through Simplytronix, with fast shipping and verified authenticity.
