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BC817UPNE6327HTSA1 Infineon Technologies
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BC817UPNE6327HTSA1

Mfr. No: BC817UPNE6327HTSA1
Mfr.: Infineon Technologies
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR ARRAY
Lifecycle: Last Time Buy
Datasheet: BC817UPNE6327HTSA1 Datasheet (PDF)
⚙ Specifications
Transistor Type 1 NPN, 1 PNP
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V
Power - Max 330mW
Frequency - Transition 170MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Supplier Device Package PG-SC74-6
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging BC 817UPN E6327
Suggested Replacement
8,464
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 105 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210075
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
ℹ Product Overview

Infineon Technologies manufactures the BC817UPNE6327HTSA1, a bipolar transistors - bjt part used in electronic assemblies. Among its key specs are transistor type: 1 NPN, 1 PNP, current, collector (ic): 500mA, voltage, collector emitter breakdown: 45V, vce saturation (max) @ ib, ic: 700mV @ 50mA, 500mA, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 160 @ 100mA, 1V. This part has a typical lead time of 105 Days from factory and ships with a full manufacturer datasheet available for download. You can source BC817UPNE6327HTSA1 through Simplytronix, with fast shipping and verified authenticity.

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