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BSC010NE2LSIATMA1 Infineon Technologies
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BSC010NE2LSIATMA1

Mfr. No: BSC010NE2LSIATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS
Lifecycle: Not For New Designs
Datasheet: BSC010NE2LSIATMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 38A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.05mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 12 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 96W (Tc)
Operating Temperature -
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-7
Package / Case 8-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging BSC010NE2LSI
Suggested Replacement
4,958
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle Not Recommended for New Designs
Lead Time 52 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Infineon Technologies's BSC010NE2LSIATMA1 is a widely used mosfets part in electronic designs. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 25 V, current, continuous drain (id) @ 25°C: 38A (Ta), 100A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 1.05mOhm @ 30A, 10V. This part has a typical lead time of 52 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies BSC010NE2LSIATMA1 with same-day shipping and guaranteed authenticity.

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