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BSC011N03LSATMA1 Infineon Technologies
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BSC011N03LSATMA1

Mfr. No: BSC011N03LSATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS
Lifecycle: Active
Datasheet: BSC011N03LSATMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 37A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 96W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging BSC011N03LS
Suggested Replacement
7,240
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 52 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

The BSC011N03LSATMA1 from Infineon Technologies falls under the mosfets category. Among its key specs are FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 30 V, current, continuous drain (id) @ 25°C: 37A (Ta), 100A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 1.1mOhm @ 30A, 10V. This part has a typical lead time of 52 Days from factory and ships with a full manufacturer datasheet available for download. BSC011N03LSATMA1 is available through Simplytronix, sourced and verified for authenticity.

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