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BSG0810NDIATMA1 Infineon Technologies
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BSG0810NDIATMA1

Mfr. No: BSG0810NDIATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs IFX FET 15V-30V
Datasheet: BSG0810NDIATMA1 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 19A, 39A
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 12V
Power - Max 2.5W
Operating Temperature -55°C ~ 155°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PG-TISON-8
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,901
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

BSG0810NDIATMA1 is a mosfets component manufactured by Infineon Technologies. Among its key specs are technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual) Asymmetrical, FET feature: Logic Level Gate, 4.5V Drive, drain to source voltage: 25V, current, continuous drain (id) @ 25°C: 19A, 39A and rds on (max) @ id, vgs: 3mOhm @ 20A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers BSG0810NDIATMA1 in stock, verified authentic and ready for same-day dispatch.

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