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BSZ15DC02KDHXTMA1 Infineon Technologies
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BSZ15DC02KDHXTMA1

Mfr. No: BSZ15DC02KDHXTMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs SMALL SIGNAL+P-CH
Datasheet: BSZ15DC02KDHXTMA1 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel Complementary
FET Feature Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.1A, 3.2A
Rds On (Max) @ Id, Vgs 55mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 419pF @ 10V
Power - Max 2.5W
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PG-TSDSON-8-FL
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging BSZ15DC02KD H
Suggested Replacement
12,899
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

Infineon Technologies's BSZ15DC02KDHXTMA1 is a widely used mosfets part in electronic designs. Among its key specs are technology: MOSFET (Metal Oxide), configuration: N and P-Channel Complementary, FET feature: Logic Level Gate, 2.5V Drive, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 5.1A, 3.2A and rds on (max) @ id, vgs: 55mOhm @ 5.1A, 4.5V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies BSZ15DC02KDHXTMA1 with same-day shipping and guaranteed authenticity.

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