| Mfr. No: | DF8MR12W1M1HFB67BPSA1 |
| Mfr.: | Infineon Technologies |
| Category: | Discrete Semiconductor Modules |
| Description: | Discrete Semiconductor Modules CoolSiC MOSFET booster module 1200 V |
| Lifecycle: | Active |
| Datasheet: | DF8MR12W1M1HFB67BPSA1 Datasheet (PDF) |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 45A |
| Rds On (Max) @ Id, Vgs | 16.2mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 149nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400pF @ 800V |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-EASY1B |
| Packaging | Tray |
| Standard Pack Qty | 24 |
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Infineon Technologies's DF8MR12W1M1HFB67BPSA1 is a widely used discrete semiconductor modules part in electronic designs. This part is specified with technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Dual), drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 45A, rds on (max) @ id, vgs: 16.2mOhm @ 50A, 18V and vgs(th) (max) @ id: 5.15V @ 20mA. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies DF8MR12W1M1HFB67BPSA1 with same-day shipping and guaranteed authenticity.