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DF8MR12W1M1HFB67BPSA1 Infineon Technologies
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DF8MR12W1M1HFB67BPSA1

Mfr. No: DF8MR12W1M1HFB67BPSA1
Mfr.: Infineon Technologies
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules CoolSiC MOSFET booster module 1200 V
Lifecycle: Active
Datasheet: DF8MR12W1M1HFB67BPSA1 Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 45A
Rds On (Max) @ Id, Vgs 16.2mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 5.15V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 149nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 800V
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-EASY1B
📦 Product Attributes
Packaging Tray
Standard Pack Qty 24
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,228
Units In Stock
📦 Tray
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 140 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Infineon Technologies's DF8MR12W1M1HFB67BPSA1 is a widely used discrete semiconductor modules part in electronic designs. This part is specified with technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Dual), drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 45A, rds on (max) @ id, vgs: 16.2mOhm @ 50A, 18V and vgs(th) (max) @ id: 5.15V @ 20mA. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies DF8MR12W1M1HFB67BPSA1 with same-day shipping and guaranteed authenticity.

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