*For representation only.
F3L6MR20W2M1HB70BPSA1
| Mfr. No: | F3L6MR20W2M1HB70BPSA1 |
| Mfr.: | Infineon Technologies |
| Description: | CoolSiC MOSFET half-bridge module 2000 V |
| Lifecycle: | Active |
| Datasheet: | F3L6MR20W2M1HB70BPSA1 Datasheet (PDF) |
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Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 2000V (2kV) |
| Current - Continuous Drain (Id) @ 25°C | 155A (Tj) |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 100A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 112mA |
| Gate Charge (Qg) (Max) @ Vgs | 297nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 24100pF @ 1200V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 15 |
13,241
Units In Stock
📦 Tray
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- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 182 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
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Product Overview
As a component component, the F3L6MR20W2M1HB70BPSA1 is manufactured and supplied by Infineon Technologies. Technical specifications for this part include technology: Silicon Carbide (SiC), configuration: 4 N-Channel, FET feature: -, drain to source voltage: 2000V (2kV), current, continuous drain (id) @ 25°C: 155A (Tj) and rds on (max) @ id, vgs: 8.7mOhm @ 100A, 18V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries F3L6MR20W2M1HB70BPSA1 in stock, backed by a genuine parts guarantee and quick dispatch.