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F3L8MR12W2M1HPB11BPSA1 Infineon Technologies
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F3L8MR12W2M1HPB11BPSA1

Mfr. No: F3L8MR12W2M1HPB11BPSA1
Mfr.: Infineon Technologies
Category: MOSFET Modules
Description: MOSFET Modules 3-Level 1200 V CoolSiC MOSFET Easy Module
Lifecycle: Active
Datasheet: F3L8MR12W2M1HPB11BPSA1 Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 85A (Tj)
Rds On (Max) @ Id, Vgs 12mOhm @ 100A, 18V
Vgs(th) (Max) @ Id 5.15V @ 40mA
Gate Charge (Qg) (Max) @ Vgs 297nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 800V
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-EASY2B
📦 Product Attributes
Packaging Tray
Standard Pack Qty 18
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,433
Units In Stock
📦 Tray
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🔑 Key Specifications
Category MOSFET Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
USHTS 8541290055
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

F3L8MR12W2M1HPB11BPSA1 is a mosfet modules part produced by Infineon Technologies for use across a range of applications. This part is specified with technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 85A (Tj), rds on (max) @ id, vgs: 12mOhm @ 100A, 18V and vgs(th) (max) @ id: 5.15V @ 40mA. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Order F3L8MR12W2M1HPB11BPSA1 from Simplytronix for authenticated stock and same-day order processing.

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