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| Mfr. No: | F417MR12W1M1HPB76BPSA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs EASY |
| Datasheet: | F417MR12W1M1HPB76BPSA1 Datasheet (PDF) |
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 45A |
| Rds On (Max) @ Id, Vgs | 16.2mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 149nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400pF @ 800V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
| Packaging | Tray |
| Standard Pack Qty | 30 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 56 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
As a mosfets component, the F417MR12W1M1HPB76BPSA1 is manufactured and supplied by Infineon Technologies. It features technology: Silicon Carbide (SiC), configuration: 4 N-Channel, FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 45A and rds on (max) @ id, vgs: 16.2mOhm @ 50A, 18V. This part has a typical lead time of 56 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries F417MR12W1M1HPB76BPSA1 in stock, backed by a genuine parts guarantee and quick dispatch.