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FF1MR12MM1HPB11BPSA1 Infineon Technologies
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FF1MR12MM1HPB11BPSA1

Mfr. No: FF1MR12MM1HPB11BPSA1
Mfr.: Infineon Technologies
Description: EconoDUAL 3 CoolSiC MOSFET 1200 V module
Lifecycle: Active
Datasheet: FF1MR12MM1HPB11BPSA1 Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 470A (Tj)
Rds On (Max) @ Id, Vgs 1.91mOhm @ 500A, 18V
Vgs(th) (Max) @ Id 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs 1600nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 48400pF @ 800V
Power - Max -
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-ECONOD
📦 Product Attributes
Packaging Tray
Standard Pack Qty 6
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement DD700N22KXPSA1
13,020
Units In Stock
📦 Tray
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🔑 Key Specifications
Category
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 168 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

FF1MR12MM1HPB11BPSA1 is a component part produced by Infineon Technologies for use across a range of applications. This component is defined by technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 470A (Tj) and rds on (max) @ id, vgs: 1.91mOhm @ 500A, 18V. This part has a typical lead time of 168 Days from factory and ships with a full manufacturer datasheet available for download. Order FF1MR12MM1HPB11BPSA1 from Simplytronix for authenticated stock and same-day order processing.

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