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FS05MR12A6MA1BBPSA1 Infineon Technologies
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FS05MR12A6MA1BBPSA1

Mfr. No: FS05MR12A6MA1BBPSA1
Mfr.: Infineon Technologies
Category: IGBT Modules
Description: IGBT Modules HYBRID PACK DRIVE G1 SIC
Datasheet: FS05MR12A6MA1BBPSA1 Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 200A
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max -
Operating Temperature -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-HYBRIDD-2
📦 Product Attributes
Packaging Tray
Standard Pack Qty 6
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,542
Units In Stock
📦 Tray
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🔑 Key Specifications
Category IGBT Modules
RoHS RoHS Compliant
Lifecycle Not Recommended for New Designs
Lead Time 308 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

Infineon Technologies's FS05MR12A6MA1BBPSA1 is a widely used igbt modules part in electronic designs. Key specifications include technology: Silicon Carbide (SiC), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 200A, rds on (max) @ id, vgs: - and vgs(th) (max) @ id: -. This part has a typical lead time of 308 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies FS05MR12A6MA1BBPSA1 with same-day shipping and guaranteed authenticity.

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