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GS-065-060-5-B-A-MR Infineon Technologies
*For representation only.

GS-065-060-5-B-A-MR

Mfr. No: GS-065-060-5-B-A-MR
Mfr.: Infineon Technologies
Category: GaN FETs
Description: GaN FETs Automotive 650V, 60A, GaN E-mode, GaNPX package, Bottom-side cooled
Lifecycle: Discontinued
Datasheet: GS-065-060-5-B-A-MR Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V
Rds On (Max) @ Id, Vgs 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id 2.6V @ 16.4mA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 6 V
Vgs (Max) +7V, -10V
Input Capacitance (Ciss) (Max) @ Vds 516 pF @ 400 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package -
Package / Case 6-SMD, No Lead
📦 Product Attributes
Packaging Reel
Standard Pack Qty 250
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,904
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Infineon Technologies's GS-065-060-5-B-A-MR is a widely used gan fets part in electronic designs. Its datasheet lists FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 60A (Tc), drive voltage: 6V and rds on (max) @ id, vgs: 32mOhm @ 18A, 6V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies GS-065-060-5-B-A-MR with same-day shipping and guaranteed authenticity.

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