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| Mfr. No: | GS0650112LMRXUSA1 |
| Mfr.: | Infineon Technologies |
| Category: | GaN FETs |
| Description: | GaN FETs LEGACY GAN SYSTEMS |
| Datasheet: | GS0650112LMRXUSA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 3.2A, 6V |
| Vgs(th) (Max) @ Id | 2.6V @ 2.4mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 6 V |
| Vgs (Max) | +7V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 70 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PDFN (8x8) |
| Package / Case | 8-VDFN Exposed Pad |
| Packaging | Reel |
| Standard Pack Qty | 250 |
| Alternate Packaging | |
| Suggested Replacement | IGL65R140D2XUMA1 |
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 126 Days (from factory) |
| Country / Standard | Code |
|---|---|
| ECCN | EAR99 |
Infineon Technologies manufactures the GS0650112LMRXUSA1, a gan fets part used in electronic assemblies. Among its key specs are FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 11A (Tc), drive voltage: 6V and rds on (max) @ id, vgs: 195mOhm @ 3.2A, 6V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. You can source GS0650112LMRXUSA1 through Simplytronix, with fast shipping and verified authenticity.
