*For representation only.
IAUC60N04S6L045HATMA1
| Mfr. No: | IAUC60N04S6L045HATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs MOSFET_(20V 40V) |
| Datasheet: | IAUC60N04S6L045HATMA1 Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tj) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 13µA |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1136pF @ 25V |
| Power - Max | 52W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-57 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
13,808
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 182 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
The IAUC60N04S6L045HATMA1 from Infineon Technologies falls under the mosfets category. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Half Bridge), FET feature: Logic Level Gate, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 60A (Tj) and rds on (max) @ id, vgs: 4.5mOhm @ 30A, 10V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. IAUC60N04S6L045HATMA1 is available through Simplytronix, sourced and verified for authenticity.
