*For representation only.
IAUCN04S7N019DATMA1
| Mfr. No: | IAUCN04S7N019DATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs MOSFET_(20V 40V) |
| Datasheet: | IAUCN04S7N019DATMA1 Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tj) |
| Rds On (Max) @ Id, Vgs | 1.99mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 35µA |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3273pF @ 20V |
| Power - Max | 96W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PG-TDSON-8-60 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
10,049
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 26 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
The IAUCN04S7N019DATMA1 from Infineon Technologies falls under the mosfets category. This part is specified with technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 160A (Tj) and rds on (max) @ id, vgs: 1.99mOhm @ 30A, 10V. This part has a typical lead time of 26 Days from factory and ships with a full manufacturer datasheet available for download. IAUCN04S7N019DATMA1 is available through Simplytronix, sourced and verified for authenticity.
