*For representation only.
IAUCN04S7N020ATMA1
| Mfr. No: | IAUCN04S7N020ATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs MOSFET_(20V 40V) |
| Lifecycle: | Active |
| Datasheet: | IAUCN04S7N020ATMA1 Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Operating Temperature | -55°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8-33 |
| Package / Case | 8-PowerTDFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
11,109
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 26 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
The IAUCN04S7N020ATMA1 from Infineon Technologies falls under the mosfets category. This component is defined by FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 40 V, drive voltage: 10V, gate charge (qg) (max) @ vgs: 24 nC @ 10 V and operating temperature: -55°C ~ 175°C. This part has a typical lead time of 26 Days from factory and ships with a full manufacturer datasheet available for download. IAUCN04S7N020ATMA1 is available through Simplytronix, sourced and verified for authenticity.
