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IAUCN08S7L024ATMA1 Infineon Technologies
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IAUCN08S7L024ATMA1

Mfr. No: IAUCN08S7L024ATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs OptiMOS 7 Power-Transistor
Lifecycle: Active
Datasheet: IAUCN08S7L024ATMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 177A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 2V @ 71µA
Gate Charge (Qg) (Max) @ Vgs 84.8 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 5177 pF @ 40 V
FET Feature -
Power Dissipation (Max) 148W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-34
Package / Case 8-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,552
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 26 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

IAUCN08S7L024ATMA1 is a mosfets component manufactured by Infineon Technologies. Among its key specs are FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 80 V, current, continuous drain (id) @ 25°C: 177A (Tj), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 2.4mOhm @ 75A, 10V. This part has a typical lead time of 26 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers IAUCN08S7L024ATMA1 in stock, verified authentic and ready for same-day dispatch.

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