| Mfr. No: | IAUCN08S7L024ATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs OptiMOS 7 Power-Transistor |
| Lifecycle: | Active |
| Datasheet: | IAUCN08S7L024ATMA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 177A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 71µA |
| Gate Charge (Qg) (Max) @ Vgs | 84.8 nC @ 10 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 5177 pF @ 40 V |
| FET Feature | - |
| Power Dissipation (Max) | 148W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8-34 |
| Package / Case | 8-PowerTDFN |
| Packaging | Reel |
| Standard Pack Qty | 5000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 26 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
IAUCN08S7L024ATMA1 is a mosfets component manufactured by Infineon Technologies. Among its key specs are FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 80 V, current, continuous drain (id) @ 25°C: 177A (Tj), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 2.4mOhm @ 75A, 10V. This part has a typical lead time of 26 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers IAUCN08S7L024ATMA1 in stock, verified authentic and ready for same-day dispatch.