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IAUTN06S5N008TATMA1 Infineon Technologies
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IAUTN06S5N008TATMA1

Mfr. No: IAUTN06S5N008TATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs MOSFET_)40V 60V)
Datasheet: IAUTN06S5N008TATMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 136A (Ta), 350A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 0.79mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3V @ 275µA
Gate Charge (Qg) (Max) @ Vgs 273 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 20280 pF @ 30 V
FET Feature -
Power Dissipation (Max) 358W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-16-2
Package / Case 16-PowerSOP Module
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,935
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 26 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Infineon Technologies's IAUTN06S5N008TATMA1 is a widely used mosfets part in electronic designs. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 136A (Ta), 350A (Tj), drive voltage: 7V, 10V and rds on (max) @ id, vgs: 0.79mOhm @ 100A, 10V. This part has a typical lead time of 26 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies IAUTN06S5N008TATMA1 with same-day shipping and guaranteed authenticity.

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