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IAUZN04S7L025ATMA1 Infineon Technologies
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IAUZN04S7L025ATMA1

Mfr. No: IAUZN04S7L025ATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs OptiMOS 7 Power-Transistor
Lifecycle: Active
Datasheet: IAUZN04S7L025ATMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 117A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.56mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 1.8V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 1954 pF @ 20 V
FET Feature -
Power Dissipation (Max) 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8-44
Package / Case 8-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,249
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 18 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Infineon Technologies's IAUZN04S7L025ATMA1 is a widely used mosfets part in electronic designs. This component is defined by FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 40 V, current, continuous drain (id) @ 25°C: 117A (Tj), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 2.56mOhm @ 30A, 10V. This part has a typical lead time of 18 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies IAUZN04S7L025ATMA1 with same-day shipping and guaranteed authenticity.

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