| Mfr. No: | IAUZN04S7L030ATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs OptiMOS 7 Power-Transistor |
| Datasheet: | IAUZN04S7L030ATMA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.05mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 15µA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 1578 pF @ 20 V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TSDSON-8-44 |
| Package / Case | 8-PowerTDFN |
| Packaging | Reel |
| Standard Pack Qty | 5000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 18 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Infineon Technologies manufactures the IAUZN04S7L030ATMA1, a mosfets part used in electronic assemblies. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 40 V, current, continuous drain (id) @ 25°C: 100A (Tj), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 3.05mOhm @ 30A, 10V. This part has a typical lead time of 18 Days from factory and ships with a full manufacturer datasheet available for download. You can source IAUZN04S7L030ATMA1 through Simplytronix, with fast shipping and verified authenticity.