| Mfr. No: | IGI60L2727B1MXUMA1 |
| Mfr.: | Infineon Technologies |
| Category: | GaN FETs |
| Description: | GaN FETs 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode |
| Lifecycle: | Active |
| Datasheet: | IGI60L2727B1MXUMA1 Datasheet (PDF) |
| Output Configuration | Half Bridge (3) |
| Applications | DC Motors, DC-DC Converters |
| Interface | PWM |
| Load Type | Capacitive and Resistive |
| Technology | Gallium Nitride (GaN) FETs |
| Rds On (Typ) | 270mOhm LS, 270mOhm HS |
| Current - Output / Channel | 4.8A |
| Current - Peak Output | 9A |
| Voltage - Supply | 10V ~ 20V |
| Voltage - Load | 600V (Max) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Features | Bootstrap Circuit |
| Fault Protection | UVLO |
| Mounting Type | Surface Mount |
| Package / Case | 27-PowerTFLGA |
| Supplier Device Package | PG-TFLGA-27-2 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 182 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8542390090 |
| MXHTS | 8542399999 |
| ECCN | EAR99 |
The IGI60L2727B1MXUMA1, made by Infineon Technologies, belongs to the gan fets product category. Notable characteristics of this part include output configuration: Half Bridge (3), applications: DC Motors, DC-DC Converters, interface: PWM, load type: Capacitive and Resistive, technology: Gallium Nitride (GaN) FETs and rds on: 270mOhm LS, 270mOhm HS. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IGI60L2727B1MXUMA1 for same-day shipping with genuine parts guaranteed.