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IGK080B041SXTSA1 Infineon Technologies
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IGK080B041SXTSA1

Mfr. No: IGK080B041SXTSA1
Mfr.: Infineon Technologies
Category: GaN FETs
Description: GaN FETs CoolGaN Bidirectional Switch
Lifecycle: Active
Datasheet: IGK080B041SXTSA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 8mOhm @ 5A, 5V
Vgs(th) (Max) @ Id 2.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 5.3 nC @ 5 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 370 pF @ 20 V
FET Feature -
Power Dissipation (Max) 1.6W (Ta), 21W (Tc)
Operating Temperature -40°C ~ 125°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SG-UFWLB-16-2
Package / Case 16-UFBGA, WLBGA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 4000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,734
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 112 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290055
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Manufactured by Infineon Technologies, the IGK080B041SXTSA1 is classified under gan fets. It features FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 40 V, current, continuous drain (id) @ 25°C: 35A (Tc), drive voltage: 5V and rds on (max) @ id, vgs: 8mOhm @ 5A, 5V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Get IGK080B041SXTSA1 from Simplytronix, shipped same day with a genuine parts guarantee.

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