*For representation only.
IGLT65R110B2AUMA1
| Mfr. No: | IGLT65R110B2AUMA1 |
| Mfr.: | Infineon Technologies |
| Category: | GaN FETs |
| Description: | GaN FETs HV GAN DISCRETES |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 4.5A |
| Vgs(th) (Max) @ Id | 1.6V @ 1.36mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.52 nC @ 3 V |
| Vgs (Max) | -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 149 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HDSOP-16-9 |
| Package / Case | 16-PowerSOP Module |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1800 |
14,731
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | |
| Lifecycle | New at Mouser |
| Lead Time | 182 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
IGLT65R110B2AUMA1 is a gan fets component manufactured by Infineon Technologies. Among its key specs are FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 14A (Tc), drive voltage: - and rds on (max) @ id, vgs: 140mOhm @ 4.5A. This part has a typical lead time of 182 Days from factory. Simplytronix offers IGLT65R110B2AUMA1 in stock, verified authentic and ready for same-day dispatch.
