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IGOT65R035D2AUMA1 Infineon Technologies
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IGOT65R035D2AUMA1

Mfr. No: IGOT65R035D2AUMA1
Mfr.: Infineon Technologies
Category: GaN FETs
Description: GaN FETs HV GAN DISCRETES
Lifecycle: Active
Datasheet: IGOT65R035D2AUMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 42mOhm @ 13A
Vgs(th) (Max) @ Id 1.6V @ 4.2mA
Gate Charge (Qg) (Max) @ Vgs 7.7 nC @ 3 V
Vgs (Max) -10V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 400 V
FET Feature -
Power Dissipation (Max) 134W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-DSO-20-91
Package / Case 20-BFSOP (0.295", 7.50mm Width)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,314
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

As a gan fets component, the IGOT65R035D2AUMA1 is manufactured and supplied by Infineon Technologies. This part is specified with FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 44A (Tc), drive voltage: - and rds on (max) @ id, vgs: 42mOhm @ 13A. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IGOT65R035D2AUMA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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