| Mfr. No: | IGT65R025D2ATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | GaN FETs |
| Description: | GaN FETs CoolGaN Transistor 650 V G5 |
| Lifecycle: | Active |
| Datasheet: | IGT65R025D2ATMA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 18A |
| Vgs(th) (Max) @ Id | 1.6V @ 6.1mA |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 3 V |
| Vgs (Max) | -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 236W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8 |
| Package / Case | 8-PowerSFN |
| Packaging | Reel |
| Standard Pack Qty | 2000 |
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 126 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
IGT65R025D2ATMA1 is a gan fets component manufactured by Infineon Technologies. Among its key specs are FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 70A (Tc), drive voltage: - and rds on (max) @ id, vgs: 30mOhm @ 18A. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers IGT65R025D2ATMA1 in stock, verified authentic and ready for same-day dispatch.