| Mfr. No: | IHW50N65R6XKSA1 |
| Mfr.: | Infineon Technologies |
| Category: | IGBTs |
| Description: | IGBTs 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package |
| Lifecycle: | Active |
| Datasheet: | IHW50N65R6XKSA1 Datasheet (PDF) |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 100 A |
| Current - Collector Pulsed (Icm) | 150 A |
| Vce(on) (Max) @ Vge, Ic | 1.6V @ 15V, 50A |
| Power - Max | 251 W |
| Switching Energy | 1.5mJ (on), 660µJ (off) |
| Input Type | Standard |
| Gate Charge | 199 nC |
| Td (on/off) @ 25°C | 21ns/261ns |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 108 ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
| Packaging | Tube |
| Standard Pack Qty | 240 |
| Category | IGBTs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 182 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
The IHW50N65R6XKSA1 from Infineon Technologies falls under the igbts category. Notable characteristics of this part include IGBT type: -, voltage, collector emitter breakdown: 650 V, current, collector (ic): 100 A, current, collector pulsed: 150 A, vce(on) (max) @ vge, ic: 1.6V @ 15V, 50A and power, max: 251 W. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. IHW50N65R6XKSA1 is available through Simplytronix, sourced and verified for authenticity.