*For representation only.
IKW50N65RH5XKSA1
| Mfr. No: | IKW50N65RH5XKSA1 |
| Mfr.: | Infineon Technologies |
| Category: | IGBTs |
| Description: | IGBTs 650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode |
| Lifecycle: | Active |
| Datasheet: | IKW50N65RH5XKSA1 Datasheet (PDF) |
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Specifications
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Power - Max | 305 W |
| Switching Energy | 230µJ (on), 180µJ (off) |
| Input Type | Standard |
| Gate Charge | 120 nC |
| Td (on/off) @ 25°C | 22ns/180ns |
| Test Condition | 400V, 25A, 12Ohm, 15V |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 240 |
5,295
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | IGBTs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 315 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
Infineon Technologies's IKW50N65RH5XKSA1 is a widely used igbts part in electronic designs. This component is defined by IGBT type: Trench Field Stop, voltage, collector emitter breakdown: 650 V, current, collector (ic): 80 A, current, collector pulsed: 200 A, vce(on) (max) @ vge, ic: 2.1V @ 15V, 50A and power, max: 305 W. This part has a typical lead time of 315 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies IKW50N65RH5XKSA1 with same-day shipping and guaranteed authenticity.
