| Mfr. No: | IMBG120R045M1HXTMA1 |
| Mfr.: | Infineon Technologies |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package |
| Lifecycle: | Active |
| Datasheet: | IMBG120R045M1HXTMA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 16A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 7.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 18 V |
| Vgs (Max) | +18V, -15V |
| Input Capacitance (Ciss) (Max) @ Vds | 1527 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 227W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7-12 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Packaging | Reel |
| Standard Pack Qty | 1000 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 315 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Infineon Technologies manufactures the IMBG120R045M1HXTMA1, a sic mosfets part used in electronic assemblies. Its datasheet lists FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 47A (Tc), rds on (max) @ id, vgs: 63mOhm @ 16A, 18V and vgs(th) (max) @ id: 5.7V @ 7.5mA. This part has a typical lead time of 315 Days from factory and ships with a full manufacturer datasheet available for download. You can source IMBG120R045M1HXTMA1 through Simplytronix, with fast shipping and verified authenticity.