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IMBG120R045M1HXTMA1 Infineon Technologies
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IMBG120R045M1HXTMA1

Mfr. No: IMBG120R045M1HXTMA1
Mfr.: Infineon Technologies
Category: SiC MOSFETs
Description: SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Lifecycle: Active
Datasheet: IMBG120R045M1HXTMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Rds On (Max) @ Id, Vgs 63mOhm @ 16A, 18V
Vgs(th) (Max) @ Id 5.7V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 18 V
Vgs (Max) +18V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1527 pF @ 800 V
FET Feature -
Power Dissipation (Max) 227W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-12
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,090
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 315 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Infineon Technologies manufactures the IMBG120R045M1HXTMA1, a sic mosfets part used in electronic assemblies. Its datasheet lists FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 47A (Tc), rds on (max) @ id, vgs: 63mOhm @ 16A, 18V and vgs(th) (max) @ id: 5.7V @ 7.5mA. This part has a typical lead time of 315 Days from factory and ships with a full manufacturer datasheet available for download. You can source IMBG120R045M1HXTMA1 through Simplytronix, with fast shipping and verified authenticity.

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