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IMCQ120R034M2HXTMA1 Infineon Technologies
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IMCQ120R034M2HXTMA1

Mfr. No: IMCQ120R034M2HXTMA1
Mfr.: Infineon Technologies
Category: SiC MOSFETs
Description: SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Lifecycle: Active
Datasheet: IMCQ120R034M2HXTMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 34mOhm @ 20.4A, 18V
Vgs(th) (Max) @ Id 5.1V @ 6.4mA
Gate Charge (Qg) (Max) @ Vgs 48.7 nC @ 18 V
Vgs (Max) +23V, -7V
Input Capacitance (Ciss) (Max) @ Vds 1920 pF @ 800 V
FET Feature -
Power Dissipation (Max) 326W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-22-3
Package / Case 22-PowerBSOP Module
📦 Product Attributes
Packaging Reel
Standard Pack Qty 750
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,175
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 315 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Infineon Technologies manufactures the IMCQ120R034M2HXTMA1, a sic mosfets part used in electronic assemblies. It features FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 64A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 34mOhm @ 20.4A, 18V. This part has a typical lead time of 315 Days from factory and ships with a full manufacturer datasheet available for download. You can source IMCQ120R034M2HXTMA1 through Simplytronix, with fast shipping and verified authenticity.

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